LAM TCP 9600SE ETCHER with ENDPOINT DETECTION in Bree, Wexford, Ireland

Lam Research TCP 9600 SE with ENDPOINT DETECTION
Description:
The LamTCP 9600SE is intended to etch aluminum metal and TiW layers with highly vertical sidewalls suitable for 0.35 um line width. The plasma is a medium-­‐high density transformer coupled plasma, similar to ICP sources, allowing separate control of coil (top electrode} power and platen (lower electrode) power. In the chamber the wafers are mechanically clamped to a water cooled platen and He backside gas provides coupling. C12/BC13 chemistry is used for Al and SF6 for TiW layers. The TiW etching and Cl-­‐passivation step (also using SF6} may be done in the exit lock or in the main chamber. Cl-­‐chemistry is expected to be effective on AI203 layers as well as silicon trenches with minimum undercut.
Features & Accessories:
Process gases: CI2, BCI3, HBr, SF6, CF4, Ar, N2, 02, He. Process pressure 0-­‐100 mTorr, top electrode power 0 -­‐ 125OW, lower electrode power 0-­‐ 1200W. Process temperature 55°C.